Archive: 2012 - Moldavian Journal of the Physical Sciences

03 Jan 2012

2012
V. 11
1-2
(p.41 - 51)

Transport properties of Cu2ZnSnS4

Authors:

Guc, Maxim; Lisunov, Constantin; Nateprov, Alexandr; Levcenco, Sergiu; Tezlevan, Victor; Aruşanov, Ernest

Summary:

Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the experimental data yields relative acceptor concentration values. In addition, the values of dielectric permittivity, width of the acceptor band, and density of the localized states are estimated.

Download PDF

Export Metadata

Google Scholar

<meta name="citation_title" content=" Transport properties of Cu2ZnSnS4">
<meta name="citation_author" content="Guc, Maxim">
<meta name="citation_author" content="Lisunov, Constantin">
<meta name="citation_author" content="Nateprov, Alexandr">
<meta name="citation_author" content="Levcenco, Sergiu">
<meta name="citation_author" content="Tezlevan, Victor">
<meta name="citation_author" content="Aruşanov, Ernest">
<meta name="citation_publication_date" content="2012/01/03">
<meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences">
<meta name="citation_volume" content="11">
<meta name="citation_issue" content="1-2">
<meta name="citation_firstpage" content="41">
<meta name="citation_lastpage" content="51">
<meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/6.Transport%20properties%20of%20Cu2ZnSnS4.pdf">

Crossref

<?xml version='1.0' encoding='utf-8'?>
<doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'>
<head>
<doi_batch_id>ibn-18993</doi_batch_id>
<timestamp>1597491117</timestamp>
<depositor>
<depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name>
<email_address>mjps@nanotech.md</email_address>
</depositor>
<registrant>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM</registrant>
</head>
<body>
<journal>
<journal_metadata>
<full_title>Moldavian Journal of the Physical Sciences</full_title>
<issn media_type='print'>1810648X</issn>
</journal_metadata>
<journal_issue>
<publication_date media_type='print'>
<year>2012</year>
</publication_date>
<issue>1-2(11)</issue>
</journal_issue>
<journal_article publication_type='full_text'><titles>
<title> Transport properties of Cu2ZnSnS4</title>
</titles>
<contributors>
<person_name sequence='first' contributor_role='author'>
<given_name>Maxim</given_name>
<surname>Guc</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Constantin</given_name>
<surname>Lisunov</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Alexandr</given_name>
<surname>Nateprov</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Sergiu</given_name>
<surname>Levcenco</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Victor</given_name>
<surname>Tezlevan</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Ernest</given_name>
<surname>Aruşanov</surname>
</person_name>
</contributors>
<publication_date media_type='print'>
<year>2012</year>
</publication_date>
<pages>
<first_page>41</first_page>
<last_page>51</last_page>
</pages>
</journal_article>
</journal>
</body>
</doi_batch>

CERIF

<?xml version='1.0' encoding='utf-8'?>
<CERIF xmlns='urn:xmlns:org:eurocris:cerif-1.5-1' xsi:schemaLocation='urn:xmlns:org:eurocris:cerif-1.5-1 http://www.eurocris.org/Uploads/Web%20pages/CERIF-1.5/CERIF_1.5_1.xsd' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' release='1.5' date='2012-10-07' sourceDatabase='Output Profile'>
<cfResPubl>
<cfResPublId>ibn-ResPubl-18993</cfResPublId>
<cfResPublDate>2012-01-03</cfResPublDate>
<cfVol>11</cfVol>
<cfIssue>1-2</cfIssue>
<cfStartPage>41</cfStartPage>
<cfISSN>1810-648X</cfISSN>
<cfURI>http://mjps.nanotech.md/archive/2012/article/18993</cfURI>
<cfTitle cfLangCode='EN' cfTrans='o'> Transport properties of Cu2ZnSnS4</cfTitle>
<cfAbstr cfLangCode='EN' cfTrans='o'>Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the experimental data yields relative acceptor concentration values. In addition, the values of dielectric permittivity, width of the acceptor band, and density of the localized states are estimated.</cfAbstr>
<cfResPubl_Class>
<cfClassId>eda2d9e9-34c5-11e1-b86c-0800200c9a66</cfClassId>
<cfClassSchemeId>759af938-34ae-11e1-b86c-0800200c9a66</cfClassSchemeId>
<cfStartDate>2012-01-03T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfResPubl_Class>
<cfClassId>e601872f-4b7e-4d88-929f-7df027b226c9</cfClassId>
<cfClassSchemeId>40e90e2f-446d-460a-98e5-5dce57550c48</cfClassSchemeId>
<cfStartDate>2012-01-03T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfPers_ResPubl>
<cfPersId>ibn-person-13201</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2012-01-03T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-1119</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2012-01-03T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-1046</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2012-01-03T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-1038</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2012-01-03T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-13329</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2012-01-03T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-189</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2012-01-03T24:00:00</cfStartDate>
</cfPers_ResPubl>
</cfResPubl>
<cfPers>
<cfPersId>ibn-Pers-13201</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-13201-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2012-01-03T24:00:00</cfStartDate>
<cfFamilyNames>Guk</cfFamilyNames>
<cfFirstNames>Maxim</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-1119</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-1119-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2012-01-03T24:00:00</cfStartDate>
<cfFamilyNames>Lisunov</cfFamilyNames>
<cfFirstNames>Konstantin</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-1046</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-1046-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2012-01-03T24:00:00</cfStartDate>
<cfFamilyNames>Nateprov</cfFamilyNames>
<cfFirstNames>Alexandr</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-1038</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-1038-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2012-01-03T24:00:00</cfStartDate>
<cfFamilyNames>Levcenko</cfFamilyNames>
<cfFirstNames>Sergiu</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-13329</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-13329-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2012-01-03T24:00:00</cfStartDate>
<cfFamilyNames>Tezlevan</cfFamilyNames>
<cfFirstNames>Victor</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-189</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-189-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2012-01-03T24:00:00</cfStartDate>
<cfFamilyNames>Arushanov</cfFamilyNames>
<cfFirstNames>Ernest</cfFirstNames>
</cfPersName_Pers>
</cfPers>
</CERIF>

BibTeX

@article{ibn_18993,
author = {Guc, M.S. and Lisunov, C.G. and Nateprov, A.N. and Levcenco, S.V. and Tezlevan, V. and Aruşanov, E.C.},
title = { Transport properties of Cu2ZnSnS4},
journal = {Moldavian Journal of the Physical Sciences},
year = {2012},
volume = {11 (1-2)},
pages = {41-51},
month = {Jan},
abstract = {(EN) Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the experimental data yields relative acceptor concentration values. In addition, the values of dielectric permittivity, width of the acceptor band, and density of the localized states are estimated.},
url = {https://ibn.idsi.md/vizualizare_articol/18993},
}

DataCite

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<creators>
<creator>
<creatorName>Guc, M.S.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Lisunov, C.G.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Nateprov, A.N.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Levcenco, S.V.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Tezlevan, V.</creatorName>
<affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Aruşanov, E.C.</creatorName>
<affiliation>Academia de Ştiinţe a Moldovei, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'> Transport properties of Cu2ZnSnS4</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2012</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<dates>
<date dateType='Issued'>2012-01-03</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'>Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the experimental data yields relative acceptor concentration values. In addition, the values of dielectric permittivity, width of the acceptor band, and density of the localized states are estimated.</description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>

Dublin Core

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Guc, M.S.</dc:creator>
<dc:creator>Lisunov, C.G.</dc:creator>
<dc:creator>Nateprov, A.N.</dc:creator>
<dc:creator>Levcenco, S.V.</dc:creator>
<dc:creator>Tezlevan, V.</dc:creator>
<dc:creator>Aruşanov, E.C.</dc:creator>
<dc:date>2012-01-03</dc:date>
<dc:description xml:lang='en'>Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the experimental data yields relative acceptor concentration values. In addition, the values of dielectric permittivity, width of the acceptor band, and density of the localized states are estimated.</dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 11 (1-2) 41-51</dc:source>
<dc:title> Transport properties of Cu2ZnSnS4</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>

“ ... ”

SM ISO690:2012

GUK, Maxim; LISUNOV, Konstantin; NATEPROV, Alexandr; LEVCENKO, Sergiu; TEZLEVAN, Victor; ARUSHANOV, Ernest. Transport properties of Cu2ZnSnS4. In: Moldavian Journal of the Physical Sciences. 2012, nr. 1-2(11), pp. 41-51. ISSN 1810-648X.