Transport properties of Cu2ZnSnS4
Authors:
Guc, Maxim; Lisunov, Constantin; Nateprov, Alexandr; Levcenco, Sergiu; Tezlevan, Victor; Aruşanov, Ernest
Summary:
Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the experimental data yields relative acceptor concentration values. In addition, the values of dielectric permittivity, width of the acceptor band, and density of the localized states are estimated.
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<meta name="citation_title" content=" Transport properties of Cu2ZnSnS4"> <meta name="citation_author" content="Guc, Maxim"> <meta name="citation_author" content="Lisunov, Constantin"> <meta name="citation_author" content="Nateprov, Alexandr"> <meta name="citation_author" content="Levcenco, Sergiu"> <meta name="citation_author" content="Tezlevan, Victor"> <meta name="citation_author" content="Aruşanov, Ernest"> <meta name="citation_publication_date" content="2012/01/03"> <meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences"> <meta name="citation_volume" content="11"> <meta name="citation_issue" content="1-2"> <meta name="citation_firstpage" content="41"> <meta name="citation_lastpage" content="51"> <meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/6.Transport%20properties%20of%20Cu2ZnSnS4.pdf">
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CERIF
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BibTeX
@article{ibn_18993, author = {Guc, M.S. and Lisunov, C.G. and Nateprov, A.N. and Levcenco, S.V. and Tezlevan, V. and Aruşanov, E.C.}, title = { Transport properties of Cu2ZnSnS4}, journal = {Moldavian Journal of the Physical Sciences}, year = {2012}, volume = {11 (1-2)}, pages = {41-51}, month = {Jan}, abstract = {(EN) Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the experimental data yields relative acceptor concentration values. In addition, the values of dielectric permittivity, width of the acceptor band, and density of the localized states are estimated.}, url = {https://ibn.idsi.md/vizualizare_articol/18993}, }
DataCite
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Dublin Core
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