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  • Archive: 2012
03 Jan 2012
  • 2012
  • V. 11
  • 1-2
  • (p.41 - 51)

Transport properties of Cu2ZnSnS4

Authors:

Guc, Maxim; Lisunov, Constantin; Nateprov, Alexandr; Levcenco, Sergiu; Tezlevan, Victor; Aruşanov, Ernest

Summary:

Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the experimental data yields relative acceptor concentration values. In addition, the values of dielectric permittivity, width of the acceptor band, and density of the localized states are estimated.

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BibTeX

@article{ibn_18993,
author = {Guc, M.S. and Lisunov, C.G. and Nateprov, A.N. and Levcenco, S.V. and Tezlevan, V. and Aruşanov, E.C.},
title = { Transport properties of Cu2ZnSnS4},
journal = {Moldavian Journal of the Physical Sciences},
year = {2012},
volume = {11 (1-2)},
pages = {41-51},
month = {Jan},
abstract = {(EN) Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the experimental data yields relative acceptor concentration values. In addition, the values of dielectric permittivity, width of the acceptor band, and density of the localized states are estimated.},
url = {https://ibn.idsi.md/vizualizare_articol/18993},
}

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<dc:date>2012-01-03</dc:date>
<dc:description xml:lang='en'>Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the experimental data yields relative acceptor concentration values. In addition, the values of dielectric permittivity, width of the acceptor band, and density of the localized states are estimated.</dc:description>
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<dc:title> Transport properties of Cu2ZnSnS4</dc:title>
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GUK, Maxim; LISUNOV, Konstantin; NATEPROV, Alexandr; LEVCENKO, Sergiu; TEZLEVAN, Victor; ARUSHANOV, Ernest. Transport properties of Cu2ZnSnS4. In: Moldavian Journal of the Physical Sciences. 2012, nr. 1-2(11), pp. 41-51. ISSN 1810-648X.

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