Logo Logo
  • Home
    • Home
    • Editorial Board
    • Goal of the Journal
    • Submission of Papers
    • License Agreement
    • Open Access Statement
    • Guidelines for Authors
    • Peer Review Process
    • Archiving and Deposit Policies
    • Ethics of the Journal
    • Browse Journal Archive
  • Browse journal archive
  • Home
  • Archive: 2010
05 Dec 2010
  • 2010
  • V. 9
  • 3-4
  • (p.270 - 274)

Compositional and aspect studies of sulphur passivation on n-GaAs

Authors:

Ghita, R.; Negrila, Constantin; Ungureanu, F.; Predoi, D.

Summary:

A real GaAs surface is covered with a relatively thick layer (~nm) of native oxide responsi- ble for the surface Fermi level pinning within the band gap of the semiconductor. The method presented in this work is the sulphur passivation by treating the semiconductor in sulphide solutions that combines both chemical and electronic passivation by reducing the surface state density (e.g., pure ammonium sulphide and sulphur monochloride). The passivated surface was examined by SEM, EDS and XPS techniques, that put into evidence the existence of an adherent layer of sulphur compound as a result of chemical interaction of sulphur ions with n-GaAs surface.

Download PDF

Export Metadata

Google Scholar

<meta name="citation_title" content="<p>Compositional and aspect studies of sulphur passivation on n-GaAs</p>">
<meta name="citation_author" content="Ghita, R.">
<meta name="citation_author" content="Negrila, Constantin">
<meta name="citation_author" content="Ungureanu, F.">
<meta name="citation_author" content="Predoi, D.">
<meta name="citation_publication_date" content="2010/12/05">
<meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences">
<meta name="citation_volume" content="9">
<meta name="citation_issue" content="3-4">
<meta name="citation_firstpage" content="270">
<meta name="citation_lastpage" content="274">
<meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/Compositional%20and%20aspect%20studies%20of%20sulphur%20passivation%20on%20n_GaAs.pdf">

Crossref

<?xml version='1.0' encoding='utf-8'?>
<doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'>
<head>
<doi_batch_id>ibn-4262</doi_batch_id>
<timestamp>1597492866</timestamp>
<depositor>
<depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name>
<email_address>mjps@nanotech.md</email_address>
</depositor>
<registrant>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM</registrant>
</head>
<body>
<journal>
<journal_metadata>
<full_title>Moldavian Journal of the Physical Sciences</full_title>
<issn media_type='print'>1810648X</issn>
</journal_metadata>
<journal_issue>
<publication_date media_type='print'>
<year>2010</year>
</publication_date>
<issue>3-4(9)</issue>
</journal_issue>
<journal_article publication_type='full_text'><titles>
<title><p>Compositional and aspect studies of sulphur passivation on n-GaAs</p></title>
</titles>
<contributors>
<person_name sequence='first' contributor_role='author'>
<given_name>R.</given_name>
<surname>Ghita</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Constantin</given_name>
<surname>Negrila</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>F.</given_name>
<surname>Ungureanu</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>D.</given_name>
<surname>Predoi</surname>
</person_name>
</contributors>
<publication_date media_type='print'>
<year>2010</year>
</publication_date>
<pages>
<first_page>270</first_page>
<last_page>274</last_page>
</pages>
</journal_article>
</journal>
</body>
</doi_batch>

CERIF

<?xml version='1.0' encoding='utf-8'?>
<CERIF xmlns='urn:xmlns:org:eurocris:cerif-1.5-1' xsi:schemaLocation='urn:xmlns:org:eurocris:cerif-1.5-1 http://www.eurocris.org/Uploads/Web%20pages/CERIF-1.5/CERIF_1.5_1.xsd' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' release='1.5' date='2012-10-07' sourceDatabase='Output Profile'>
<cfResPubl>
<cfResPublId>ibn-ResPubl-4262</cfResPublId>
<cfResPublDate>2010-12-05</cfResPublDate>
<cfVol>9</cfVol>
<cfIssue>3-4</cfIssue>
<cfStartPage>270</cfStartPage>
<cfISSN>1810-648X</cfISSN>
<cfURI>http://mjps.nanotech.md/archive/2010/article/4262</cfURI>
<cfTitle cfLangCode='EN' cfTrans='o'><p>Compositional and aspect studies of sulphur passivation on n-GaAs</p></cfTitle>
<cfAbstr cfLangCode='EN' cfTrans='o'>A real GaAs surface is covered with a relatively thick layer (~nm) of native oxide responsi-

ble for the surface Fermi level pinning within the band gap of the semiconductor. The method 
presented in this work is the sulphur passivation by treating the semiconductor in sulphide solutions that combines both chemical and electronic passivation by reducing the surface state density 
(e.g., pure ammonium sulphide and sulphur monochloride). The passivated surface was examined 
by SEM, EDS and XPS techniques, that put into evidence the existence of an adherent layer of 
sulphur compound as a result of chemical interaction of sulphur ions with n-GaAs surface. 
 </cfAbstr>
<cfResPubl_Class>
<cfClassId>eda2d9e9-34c5-11e1-b86c-0800200c9a66</cfClassId>
<cfClassSchemeId>759af938-34ae-11e1-b86c-0800200c9a66</cfClassSchemeId>
<cfStartDate>2010-12-05T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfResPubl_Class>
<cfClassId>e601872f-4b7e-4d88-929f-7df027b226c9</cfClassId>
<cfClassSchemeId>40e90e2f-446d-460a-98e5-5dce57550c48</cfClassSchemeId>
<cfStartDate>2010-12-05T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfPers_ResPubl>
<cfPersId>ibn-person-35255</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2010-12-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-35256</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2010-12-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-35257</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2010-12-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-35258</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2010-12-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
</cfResPubl>
<cfPers>
<cfPersId>ibn-Pers-35255</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-35255-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2010-12-05T24:00:00</cfStartDate>
<cfFamilyNames>Ghita</cfFamilyNames>
<cfFirstNames>R.</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-35256</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-35256-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2010-12-05T24:00:00</cfStartDate>
<cfFamilyNames>Negrila</cfFamilyNames>
<cfFirstNames>Constantin</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-35257</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-35257-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2010-12-05T24:00:00</cfStartDate>
<cfFamilyNames>Ungureanu</cfFamilyNames>
<cfFirstNames>F.</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-35258</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-35258-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2010-12-05T24:00:00</cfStartDate>
<cfFamilyNames>Predoi</cfFamilyNames>
<cfFirstNames>D.</cfFirstNames>
</cfPersName_Pers>
</cfPers>
</CERIF>

BibTeX

@article{ibn_4262,
author = {Ghita, R.V. and Negrila, C.C. and Ungureanu, F. and Predoi, D.},
title = {<p>Compositional and aspect studies of sulphur passivation on n-GaAs</p>},
journal = {Moldavian Journal of the Physical Sciences},
year = {2010},
volume = {9 (3-4)},
pages = {270-274},
month = {Dec},
abstract = {(EN) A real GaAs surface is covered with a relatively thick layer (~nm) of native oxide responsi-

ble for the surface Fermi level pinning within the band gap of the semiconductor. The method 
presented in this work is the sulphur passivation by treating the semiconductor in sulphide solutions that combines both chemical and electronic passivation by reducing the surface state density 
(e.g., pure ammonium sulphide and sulphur monochloride). The passivated surface was examined 
by SEM, EDS and XPS techniques, that put into evidence the existence of an adherent layer of 
sulphur compound as a result of chemical interaction of sulphur ions with n-GaAs surface. 
 },
url = {https://ibn.idsi.md/vizualizare_articol/4262},
}

DataCite

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<creators>
<creator>
<creatorName>Ghita, R.V.</creatorName>
<affiliation>National Institute of Materials Physics Bucharest-Magurele, România</affiliation>
</creator>
<creator>
<creatorName>Negrila, C.C.</creatorName>
<affiliation>National Institute of Materials Physics Bucharest-Magurele, România</affiliation>
</creator>
<creator>
<creatorName>Ungureanu, F.</creatorName>
<affiliation>National Institute of Materials Physics Bucharest-Magurele, România</affiliation>
</creator>
<creator>
<creatorName>Predoi, D.</creatorName>
<affiliation>National Institute of Materials Physics Bucharest-Magurele, România</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'><p>Compositional and aspect studies of sulphur passivation on n-GaAs</p></title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2010</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<dates>
<date dateType='Issued'>2010-12-05</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'>A real GaAs surface is covered with a relatively thick layer (~nm) of native oxide responsi-

ble for the surface Fermi level pinning within the band gap of the semiconductor. The method 
presented in this work is the sulphur passivation by treating the semiconductor in sulphide solutions that combines both chemical and electronic passivation by reducing the surface state density 
(e.g., pure ammonium sulphide and sulphur monochloride). The passivated surface was examined 
by SEM, EDS and XPS techniques, that put into evidence the existence of an adherent layer of 
sulphur compound as a result of chemical interaction of sulphur ions with n-GaAs surface. 
 </description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>

Dublin Core

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Ghita, R.V.</dc:creator>
<dc:creator>Negrila, C.C.</dc:creator>
<dc:creator>Ungureanu, F.</dc:creator>
<dc:creator>Predoi, D.</dc:creator>
<dc:date>2010-12-05</dc:date>
<dc:description xml:lang='en'>A real GaAs surface is covered with a relatively thick layer (~nm) of native oxide responsi-

ble for the surface Fermi level pinning within the band gap of the semiconductor. The method 
presented in this work is the sulphur passivation by treating the semiconductor in sulphide solutions that combines both chemical and electronic passivation by reducing the surface state density 
(e.g., pure ammonium sulphide and sulphur monochloride). The passivated surface was examined 
by SEM, EDS and XPS techniques, that put into evidence the existence of an adherent layer of 
sulphur compound as a result of chemical interaction of sulphur ions with n-GaAs surface. 
 </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 9 (3-4) 270-274</dc:source>
<dc:title><p>Compositional and aspect studies of sulphur passivation on n-GaAs</p></dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>

        

CC BY

Files

Download PDF

“ ... ”

SM ISO690:2012

GHITA, R.; NEGRILA, Constantin; UNGUREANU, F.; PREDOI, D.. Compositional and aspect studies of sulphur passivation on n-GaAs. In: Moldavian Journal of the Physical Sciences. 2010, nr. 3-4(9), pp. 270-274. ISSN 1810-648X.

Views & Downloads

  • Views 338
  • Downloads 167

Archives

  • 2022 (11)
  • 2021 (17)
  • 2020 (8)
  • 2019 (15)
  • 2018 (26)
  • 2017 (19)
  • 2016 (33)
  • 2015 (28)
  • 2014 (28)
  • 2013 (41)
  • 2012 (44)
  • 2011 (48)
  • 2010 (48)
  • 2009 (60)
  • 2008 (67)
  • 2007 (37)
  • 2006 (52)
  • 2005 (68)
Logo Logo

GHITU INSTITUTE OF ELECTRONIC
ENGINEERING AND NANOTECHNOLOGIES
INSTITUTE OF APPLIED PHYSICS
STATE UNIVERSITY OF MOLDOVA
PHYSICAL SOCIETY OF MOLDOVA

Contact Info

You can contact us in one of the following ways

  • Email: mjps@nanotech.md
  • Phone: +(373 22) 739060, +(373 22) 737092

© Copyright 2023

  • Developed by Morari Constantin