Archive: 2010 - Moldavian Journal of the Physical Sciences

05 Dec 2010

2010
V. 9
3-4
(p.270 - 274)

Compositional and aspect studies of sulphur passivation on n-GaAs

Authors:

Ghita, R.; Negrila, Constantin; Ungureanu, F.; Predoi, D.

Summary:

A real GaAs surface is covered with a relatively thick layer (~nm) of native oxide responsi- ble for the surface Fermi level pinning within the band gap of the semiconductor. The method presented in this work is the sulphur passivation by treating the semiconductor in sulphide solutions that combines both chemical and electronic passivation by reducing the surface state density (e.g., pure ammonium sulphide and sulphur monochloride). The passivated surface was examined by SEM, EDS and XPS techniques, that put into evidence the existence of an adherent layer of sulphur compound as a result of chemical interaction of sulphur ions with n-GaAs surface.

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BibTeX

@article{ibn_4262,
author = {Ghita, R.V. and Negrila, C.C. and Ungureanu, F. and Predoi, D.},
title = {<p>Compositional and aspect studies of sulphur passivation on n-GaAs</p>},
journal = {Moldavian Journal of the Physical Sciences},
year = {2010},
volume = {9 (3-4)},
pages = {270-274},
month = {Dec},
abstract = {(EN) A real GaAs surface is covered with a relatively thick layer (~nm) of native oxide responsi-

ble for the surface Fermi level pinning within the band gap of the semiconductor. The method 
presented in this work is the sulphur passivation by treating the semiconductor in sulphide solutions that combines both chemical and electronic passivation by reducing the surface state density 
(e.g., pure ammonium sulphide and sulphur monochloride). The passivated surface was examined 
by SEM, EDS and XPS techniques, that put into evidence the existence of an adherent layer of 
sulphur compound as a result of chemical interaction of sulphur ions with n-GaAs surface. 
 },
url = {https://ibn.idsi.md/vizualizare_articol/4262},
}

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(e.g., pure ammonium sulphide and sulphur monochloride). The passivated surface was examined 
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sulphur compound as a result of chemical interaction of sulphur ions with n-GaAs surface. 
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“ ... ”

SM ISO690:2012

GHITA, R.; NEGRILA, Constantin; UNGUREANU, F.; PREDOI, D.. Compositional and aspect studies of sulphur passivation on n-GaAs. In: Moldavian Journal of the Physical Sciences. 2010, nr. 3-4(9), pp. 270-274. ISSN 1810-648X.