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  • Archive: 2008
05 Oct 2008
  • 2008
  • V. 7
  • 4
  • (p.449 - 455)

Specific features of optic qualities of Hg1-xMnxTe and Hg1-x-yCdxMnyTe semimagnetic materials with narrow GAP compared with Hg1-xCdxTe nonmagnetic semiconductor

Authors:

Gheorghiţă, Eugen; Guţuleac, Leonid; Postolachi, Igor; Untilă, Pantelei

Summary:

In the present work we study the basic laws of component distribution distribution on the epitaxial layer geometry of Hg Mn Te, Hg Cd Te and Hg Cd Mn Te using the micro-X-ray-structural method and the optic method. A curve of standardization was constructed, using the energy band from the experiment to determine the concentration of cadmium and manganese. Analyzing the absorption spectra structure it was determined that in the absence of external magnetic field the energy spectra of the charge carriers of the Hg Mn Te and Hg Cd Mn Te semimagnetic materials and of Hg Cd Te nonmagnetic material with the same energy gap have the same form. The theoretical calculations of absorbtion spectra were realized within the Kane model with its non-parabolic perturbations specific for indium antimonide as the narrow-gap semiconductor.

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BibTeX

@article{ibn_3944,
author = {Gheorghiţă, E.I. and Guţuleac, L.M. and Postolachi, I.T. and Untilă, P.G.},
title = {Specific features of optic qualities of 
Hg1-xMnxTe and Hg1-x-yCdxMnyTe semimagnetic materials with narrow GAP compared with Hg1-xCdxTe nonmagnetic semiconductor },
journal = {Moldavian Journal of the Physical Sciences},
year = {2008},
volume = {7 (4)},
pages = {449-455},
month = {Oct},
abstract = {(EN) In the present work we study the basic laws of component distribution distribution on 

the epitaxial layer geometry of Hg Mn Te, Hg Cd Te and Hg Cd Mn Te using the micro-X-ray-structural method and the optic method. A curve of standardization was constructed, using the energy band from the experiment to determine the concentration of 
cadmium and manganese. Analyzing the absorption spectra structure it was determined that in 
the absence of external magnetic field the energy spectra of the charge carriers of the 
Hg Mn Te and Hg Cd Mn Te semimagnetic materials and of Hg Cd Te nonmagnetic 
material with the same energy gap have the same form. The theoretical calculations of absorbtion spectra were realized within the Kane model with its non-parabolic perturbations specific 
for indium antimonide as the narrow-gap semiconductor. },
url = {https://ibn.idsi.md/vizualizare_articol/3944},
}

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cadmium and manganese. Analyzing the absorption spectra structure it was determined that in 
the absence of external magnetic field the energy spectra of the charge carriers of the 
Hg Mn Te and Hg Cd Mn Te semimagnetic materials and of Hg Cd Te nonmagnetic 
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<dc:description xml:lang='en'>In the present work we study the basic laws of component distribution distribution on 

the epitaxial layer geometry of Hg Mn Te, Hg Cd Te and Hg Cd Mn Te using the micro-X-ray-structural method and the optic method. A curve of standardization was constructed, using the energy band from the experiment to determine the concentration of 
cadmium and manganese. Analyzing the absorption spectra structure it was determined that in 
the absence of external magnetic field the energy spectra of the charge carriers of the 
Hg Mn Te and Hg Cd Mn Te semimagnetic materials and of Hg Cd Te nonmagnetic 
material with the same energy gap have the same form. The theoretical calculations of absorbtion spectra were realized within the Kane model with its non-parabolic perturbations specific 
for indium antimonide as the narrow-gap semiconductor. </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 7 (4) 449-455</dc:source>
<dc:title>Specific features of optic qualities of 
Hg1-xMnxTe and Hg1-x-yCdxMnyTe semimagnetic materials with narrow GAP compared with Hg1-xCdxTe nonmagnetic semiconductor </dc:title>
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GHEORGHIŢĂ, Eugen; GUŢULEAC, Leonid; POSTOLACHI, Igor; UNTILĂ, Pantelei. Specific features of optic qualities of Hg1-xMnxTe and Hg1-x-yCdxMnyTe semimagnetic materials with narrow GAP compared with Hg1-xCdxTe nonmagnetic semiconductor . In: Moldavian Journal of the Physical Sciences. 2008, nr. 4(7), pp. 449-455. ISSN 1810-648X.

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