Archive: 2008 - Moldavian Journal of the Physical Sciences

05 Jul 2008

2008
V. 7
3
(p.375 - 381)

Scattering mechanisms of charge carriers in gallium antimonide doped with iron

Authors:

Gheorghiţă, Eugen; Guţuleac, Leonid; Melinte, Victoria; Zlotea, Olga; Postolachi, Igor

Summary:

Obtaining, homogenizing, and purifying technologic conditions for gallium antimonide doped with iron and simultaneously doped with iron and tellurium are described. According to the research of galvanometric features of nondoped gallium antimonide and gallium antimonide doped with 3 at % iron concentration for the temperature range of 4.2÷300 K, the mechanisms of charge carrier scattering are analyzed. It is demonstrated that for explanation of experimental data obtained for the U = U(T) function it is necessary to involve an additional mechanism of charge carrier scattering specific to the inclusions formed in gallium antimonide – clusters. Using the physical conceptions of this mechanism, the basic characteristics of scattering of the charge carriers determined by clusters are determined.

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BibTeX

@article{ibn_3922,
author = {Gheorghiţă, E.I. and Guţuleac, L.M. and Melinte, V.A. and Zlotea, O. and Postolachi, I.T.},
title = {Scattering mechanisms of charge carriers in 
gallium antimonide doped with iron},
journal = {Moldavian Journal of the Physical Sciences},
year = {2008},
volume = {7 (3)},
pages = {375-381},
month = {Jul},
abstract = {(EN) Obtaining, homogenizing, and purifying technologic conditions for gallium antimonide 

doped with iron and simultaneously doped with iron and tellurium are described. According 
to the research of galvanometric features of nondoped gallium antimonide and gallium antimonide doped with 3 at % iron concentration for the temperature range of 4.2÷300 K, the 
mechanisms of charge carrier scattering are analyzed. It is demonstrated that for explanation 
of experimental data obtained for the U = U(T) function it is necessary to involve an additional mechanism of charge carrier scattering specific to the inclusions formed in gallium antimonide – clusters. Using the physical conceptions of this mechanism, the basic 
characteristics of scattering of the charge carriers determined by clusters are determined. },
url = {https://ibn.idsi.md/vizualizare_articol/3922},
}

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doped with iron and simultaneously doped with iron and tellurium are described. According 
to the research of galvanometric features of nondoped gallium antimonide and gallium antimonide doped with 3 at % iron concentration for the temperature range of 4.2÷300 K, the 
mechanisms of charge carrier scattering are analyzed. It is demonstrated that for explanation 
of experimental data obtained for the U = U(T) function it is necessary to involve an additional mechanism of charge carrier scattering specific to the inclusions formed in gallium antimonide – clusters. Using the physical conceptions of this mechanism, the basic 
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“ ... ”

SM ISO690:2012

GHEORGHIŢĂ, Eugen; GUŢULEAC, Leonid; MELINTE, Victoria; ZLOTEA, Olga; POSTOLACHI, Igor. Scattering mechanisms of charge carriers in gallium antimonide doped with iron. In: Moldavian Journal of the Physical Sciences. 2008, nr. 3(7), pp. 375-381. ISSN 1810-648X.