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  • Archive: 2008
05 Feb 2008
  • 2008
  • V. 7
  • 1
  • (p.86 - 95)

High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation

Authors:

Nazarov, Mihail

Summary:

Multiexcitation of phosphors, additional scattering layer around the chip and special re- flecting medium were proposed to improve the luminous efficiency and color properties of LED devices. LED devices with an n-UV Ga(In)N chip as well as blue GaN chip and multiexcited phosphors were developed and created. These LEDs for white light generation show better quantum yield of green and red phosphors, higher total brightness, and improved color rendering index.

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BibTeX

@article{ibn_3785,
author = {Nazarov, M.V.},
title = {High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation },
journal = {Moldavian Journal of the Physical Sciences},
year = {2008},
volume = {7 (1)},
pages = {86-95},
month = {Feb},
abstract = {(EN) Multiexcitation of phosphors, additional scattering layer around the chip and special re-

flecting medium were proposed to improve the  luminous efficiency and color properties of 
LED devices. LED devices with an n-UV Ga(In)N chip as well as blue GaN chip and multiexcited phosphors were developed and created. These LEDs for white light generation show 
better quantum yield of green and red phosphors, higher total brightness, and improved color 
rendering index. 
 },
url = {https://ibn.idsi.md/vizualizare_articol/3785},
}

DataCite

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flecting medium were proposed to improve the  luminous efficiency and color properties of 
LED devices. LED devices with an n-UV Ga(In)N chip as well as blue GaN chip and multiexcited phosphors were developed and created. These LEDs for white light generation show 
better quantum yield of green and red phosphors, higher total brightness, and improved color 
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Dublin Core

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<dc:creator>Nazarov, M.V.</dc:creator>
<dc:date>2008-02-05</dc:date>
<dc:description xml:lang='en'>Multiexcitation of phosphors, additional scattering layer around the chip and special re-

flecting medium were proposed to improve the  luminous efficiency and color properties of 
LED devices. LED devices with an n-UV Ga(In)N chip as well as blue GaN chip and multiexcited phosphors were developed and created. These LEDs for white light generation show 
better quantum yield of green and red phosphors, higher total brightness, and improved color 
rendering index. 
 </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 7 (1) 86-95</dc:source>
<dc:title>High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation </dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
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NAZAROV, Mihail. High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation . In: Moldavian Journal of the Physical Sciences. 2008, nr. 1(7), pp. 86-95. ISSN 1810-648X.

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