Archive: 2008 - Moldavian Journal of the Physical Sciences

05 Feb 2008

2008
V. 7
1
(p.26 - 31)

Growth technology for ZnSe single crystals with low dislocation density

Authors:

Colibaba, Gleb; Nedeoglo, Dumitru

Summary:

The influence of the growth temperature, undercooling, growth rate as well as growth chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical vapors transport has been investigated. The conditions for growing of crystals free from subgrain boundaries and twins are suggested. The etch pits are not observed in the basic volume (up to 4 сm ) of grown crystals. It is shown, that PL spectra of as-grown ZnSe crystals consist of the edge radiation only. The resistivity of ZnSe crystals annealed in a Zn melt is higher than 10 Ohm⋅cm, whereas the electrical conductivity of ZnSe:I crystals grown by chemical vapor transport and annealed in a Zn melt is 10 (Ohm⋅cm) at room temperature.

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<meta name="citation_title" content="Growth technology for ZnSe single crystals with low dislocation density 
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<meta name="citation_author" content="Nedeoglo, Dumitru">
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Crossref

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BibTeX

@article{ibn_3757,
author = {Colibaba, G.V. and Nedeoglo, D.D.},
title = {Growth technology for ZnSe single crystals with low dislocation density 
 },
journal = {Moldavian Journal of the Physical Sciences},
year = {2008},
volume = {7 (1)},
pages = {26-31},
month = {Feb},
abstract = {(EN) The influence of the growth temperature, undercooling, growth rate as well as growth 

chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical vapors transport has been investigated. The conditions for growing of crystals free from subgrain boundaries and twins are suggested. The etch 
pits are not observed in the basic volume (up to 4 сm ) of grown crystals. It is shown, that PL 
spectra of as-grown ZnSe crystals consist of the edge radiation only. The resistivity of ZnSe 
crystals annealed in a Zn melt is higher than 10  Ohm⋅cm, whereas the electrical conductivity 
of ZnSe:I crystals grown by chemical vapor transport and annealed in a Zn melt is 
10 (Ohm⋅cm)  at room temperature. },
url = {https://ibn.idsi.md/vizualizare_articol/3757},
}

DataCite

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chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical vapors transport has been investigated. The conditions for growing of crystals free from subgrain boundaries and twins are suggested. The etch 
pits are not observed in the basic volume (up to 4 сm ) of grown crystals. It is shown, that PL 
spectra of as-grown ZnSe crystals consist of the edge radiation only. The resistivity of ZnSe 
crystals annealed in a Zn melt is higher than 10  Ohm⋅cm, whereas the electrical conductivity 
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Dublin Core

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<dc:date>2008-02-05</dc:date>
<dc:description xml:lang='en'>The influence of the growth temperature, undercooling, growth rate as well as growth 

chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical vapors transport has been investigated. The conditions for growing of crystals free from subgrain boundaries and twins are suggested. The etch 
pits are not observed in the basic volume (up to 4 сm ) of grown crystals. It is shown, that PL 
spectra of as-grown ZnSe crystals consist of the edge radiation only. The resistivity of ZnSe 
crystals annealed in a Zn melt is higher than 10  Ohm⋅cm, whereas the electrical conductivity 
of ZnSe:I crystals grown by chemical vapor transport and annealed in a Zn melt is 
10 (Ohm⋅cm)  at room temperature. </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 7 (1) 26-31</dc:source>
<dc:title>Growth technology for ZnSe single crystals with low dislocation density 
 </dc:title>
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“ ... ”

SM ISO690:2012

COLIBABA, Gleb; NEDEOGLO, Dumitru. Growth technology for ZnSe single crystals with low dislocation density . In: Moldavian Journal of the Physical Sciences. 2008, nr. 1(7), pp. 26-31. ISSN 1810-648X.